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Other articles related with "oxide traps"：
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38501 |
He-Kun Zhang(章合坤), Xuan Tian(田璇), Jun-Peng He(何俊鹏), Zhe Song(宋哲), Qian-Qian Yu(蔚倩倩), Liang Li(李靓), Ming Li(李明), Lian-Cheng Zhao(赵连城), Li-Ming Gao(高立明) |
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Investigation of gate oxide traps effect on NAND flash memory by TCAD simulation |
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Chin. Phys. B
2020 Vol.29 (3): 38501-038501
[Abstract]
(775)
[HTML 1 KB]
[PDF 964 KB]
(187)
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97101 |
Yifan Jia(贾一凡), Hongliang Lv(吕红亮), Yingxi Niu(钮应喜), Ling Li(李玲), Qingwen Song(宋庆文), Xiaoyan Tang(汤晓燕), Chengzhan Li(李诚瞻), Yanli Zhao(赵艳黎), Li Xiao(肖莉), Liangyong Wang(王梁永), Guangming Tang(唐光明), Yimen Zhang(张义门), Yuming Zhang(张玉明) |
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Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices |
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Chin. Phys. B
2016 Vol.25 (9): 97101-097101
[Abstract]
(626)
[HTML 0 KB]
[PDF 775 KB]
(335)
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17305 |
Fang Zhong-Hui (方忠慧), Jiang Xiao-Fan (江小帆), Chen Kun-Ji (陈坤基), Wang Yue-Fei (王越飞), Li Wei (李伟), Xu Jun (徐骏) |
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Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiNx matrix by the influence of near-interface oxide traps |
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Chin. Phys. B
2015 Vol.24 (1): 17305-017305
[Abstract]
(527)
[HTML 0 KB]
[PDF 718 KB]
(483)
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309 |
Cao Yan-Rong(曹艳荣), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Hu Shi-Gang(胡仕刚) |
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Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel metal--oxide--semiconductor field-effect transistors |
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Chin. Phys. B
2009 Vol.18 (1): 309-314
[Abstract]
(1309)
[HTML 1 KB]
[PDF 231 KB]
(928)
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